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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BDP949E6327HTSA1 |
| Description | NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A; |
| Datasheet | BDP949E6327HTSA1 Datasheet |
| In Stock | 2,391 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 3 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
BDP949E6327INTR-ND BDP 949 E6327 BDP949E6327BTSA1 BDP949E6327HTSA1DKR BDP949E6327INCT-ND BDP949E6327INTR BDP 949 E6327-ND BDP949E6327HTSA1TR BDP949E6327INDKR-ND BDP949E6327INCT BDP949E6327HTSA1CT BDP949E6327 BDP949E6327INDKR BDP949E6327XT SP000010932 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 50 |
| Maximum Collector-Emitter Voltage: | 60 V |
| Maximum Collector-Base Capacitance: | 25 pF |
| Reference Standard: | AEC-Q101 |
| Maximum VCEsat: | .5 V |
