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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BF1005E6327HTSA1 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | BF1005E6327HTSA1 Datasheet |
| In Stock | 875 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BF 1005 E6327-ND 2156-BF1005E6327HTSA1-ITTR BF1005E6327XT BF1005E6327BTSA1 SP000010946 BF1005E6327HTSA1TR INFINFBF1005E6327HTSA1 BF 1005 E6327 |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .025 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 12 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |








