BF1009SRE6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BF1009SRE6327HTSA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Additional Features: LOW NOISE;
Datasheet	BF1009SRE6327HTSA1 Datasheet
In Stock	2,211

NAME	DESCRIPTION
Minimum Power Gain (Gp):	18 dB
Other Names:	BF 1009SR E6327-ND BF 1009SR E6327 BF1009SRE6327XT BF1009SRE6327HTSA1TR 2156-BF1009SRE6327HTSA1-ITTR SP000010956 INFINFBF1009SRE6327HTSA1
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.025 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	12 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Case Connection:	SOURCE

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,211	-	-

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;