NXP Semiconductors - BLS7G3135LS-200

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Case Connection: SOURCE; No. of Elements: 1;

Broadcom's ATF-34143-TR1G is an N-channel RF FET with 5.5V DS breakdown voltage and 16dB power gain, ideal for amplifier applications in X-band frequencies. This single configuration transistor operates in depletion mode, with a max power dissipation of 0.725W at 160°C ambient temperature. It features a gull wing terminal form and matte tin finish in a small outline package style.

NXP Semiconductors' BF998WR,115 is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a max drain current of 0.03A and operates in the ULTRA HIGH FREQUENCY BAND. With a package style of SMALL OUTLINE, it can handle up to 150°C operating temperature.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Minimum DS Breakdown Voltage: 18 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Position: DUAL; Case Connection: SOURCE;

Broadcom's ATF-54143-TR1G is an N-channel RF FET with 5V DS breakdown voltage and 15dB power gain, ideal for amplifier applications in C band. It features a small outline package, Gull Wing terminals, and operates in enhancement mode with high electron mobility technology. With a max power dissipation of 0.725W and operating temperature of 150°C, it offers reliable performance for various RF signal amplification needs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 7 V;

Broadcom's ATF-36077-STR is an N-channel RF FET with 3V DS breakdown voltage and 11dB power gain, ideal for X-band applications. Featuring a ceramic-metal package, it operates in depletion mode with a max temp of 150°C. Suitable for amplifiers, this transistor has a flat terminal form and gold finish.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 25 V;

RF Small Signal Field-Effect Transistors;

The Onsemi MMBFJ310 is an N-CHANNEL RF FET with 25V DS Breakdown Voltage. It operates in DEPLETION MODE for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. This SMALL OUTLINE transistor has a Max Operating Temperature of 150°C and a feedback capacitance of 2.5 pF, making it suitable for high-frequency amplification needs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Operating Mode: DEPLETION MODE; Package Shape: ROUND;

RF Small Signal Field-Effect Transistors;

2N5246 by Texas Instruments is an N-CHANNEL RF FET with 10 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and can handle up to 0.36 W power dissipation. The transistor features a SILICON element, 3 terminals, and a CYLINDRICAL package shape.

RF Small Signal Field-Effect Transistors; Surface Mount: YES; No. of Terminals: 4; Package Body Material: UNSPECIFIED; Package Shape: ROUND; Package Style (Meter): DISK BUTTON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G4;

BF908R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. Ideal for compact surface mount designs, it ensures efficient performance in various electronic circuits.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; Transistor Application: AMPLIFIER; Qualification: Not Qualified;