NXP Semiconductors - BLF882

  1. Home
  2. NXP Semiconductors - BLF882
BLF882 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF882
Description RF Small Signal Field-Effect Transistors;
Datasheet BLF882 Datasheet
In Stock45
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
45 - -

Popular Products

Category Top Products

BF908R-TAPE-7 by NXP Semiconductors

BF908R-TAPE-7

NXP Semiconductors

BF908R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in the ultra-high frequency band, and supports dual gate depletion mode. Ideal for compact surface mount designs, it ensures efficient performance in various electronic circuits.
NE3210S01-T1 by Renesas Electronics

NE3210S01-T1

Renesas Electronics

NE3210S01-T1 by Renesas Electronics is a N-CHANNEL RF FET for AMPLIFIER applications. Features include Gp of 12 dB, DEPLETION MODE operation, and KU BAND frequency band. With a max power dissipation of 0.165 W and operating temp up to 125 °C, it's ideal for MICROWAVE systems.
FHX35X by Sumitomo Electric Industries

FHX35X

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: UPPER; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Body Material: UNSPECIFIED;
2N5486 by Micro Electronics

2N5486

Micro Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;
BLF221B by NXP Semiconductors

BLF221B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.4 W; Maximum Drain Current (Abs) (ID): 1 A; Transistor Element Material: SILICON;
2N4224 by Texas Instruments

2N4224

Texas Instruments

2N4224 by Texas Instruments is a N-CHANNEL FET with 30V DS Breakdown Voltage, 10dB Power Gain, and 0.3W Power Dissipation. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation.
BF904AWR,115 by NXP Semiconductors

BF904AWR,115

NXP Semiconductors

BF904AWR,115 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a max drain current of 0.03 A and operating temperature of 150°C. It is designed for amplifier applications in the ultra high frequency band, featuring a dual gate configuration and matte tin terminal finish. This surface mount transistor has a small outline package style and offers a min DS breakdown voltage of 7 V.
2N3823 by Inter F E T

2N3823

Inter F E T

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Terminal Form: WIRE;
2N4416A by Texas Instruments

2N4416A

Texas Instruments

2N4416A by Texas Instruments is an N-CHANNEL FET with 35V DS Breakdown Voltage, 10dB Power Gain, and operates in DEPLETION MODE. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and 0.3W power dissipation capability at 200°C.
BF904AWRT/R by NXP Semiconductors

BF904AWRT/R

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF511TRL by NXP Semiconductors

BF511TRL

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;
BF256ARLRE by Onsemi

BF256ARLRE

Onsemi

BF256ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring a SINGLE configuration, such as RF amplifiers and oscillators.
ATF-54143-BLKG by Broadcom

ATF-54143-BLKG

Broadcom

Broadcom ATF-54143-BLKG is a N-channel FET with 5V DS breakdown voltage, 15dB power gain, and operates in C band. Ideal for amplifier applications, it has a max drain current of 0.12A and can handle up to 0.725W power dissipation at 150°C.
2N3819/D27Z by National Semiconductor

2N3819/D27Z

National Semiconductor

2N3819/D27Z by National Semiconductor is an N-CHANNEL RF FET with DEPLETION MODE operation. It features a Max Feedback Capacitance of 4 pF, making it ideal for AMPLIFIER applications. This THROUGH-HOLE transistor has a CYLINDRICAL package and SILICON element material.
FLC057WG by Sumitomo Electric Industries

FLC057WG

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: FLAT; Field Effect Transistor Technology: JUNCTION;
BF2040E6814HTSA1 by Infineon Technologies

BF2040E6814HTSA1

Infineon Technologies

Infineon's BF2040E6814HTSA1 is an N-CHANNEL RF FET with 10V DS breakdown voltage and 20dB power gain. Ideal for amplifiers in ultra-high frequency bands, it features a dual-gate, depletion mode operation and GULL WING terminals in a small outline package.
MMBF4416LT1 by Motorola

MMBF4416LT1

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
J310RL by Onsemi

J310RL

Onsemi

J310RL by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a Max Operating Temperature of 125 °C and a Crss of 2.5 pF, housed in a CYLINDRICAL package with TIN LEAD finish.
BF511-T by NXP Semiconductors

BF511-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
TGF2023-2-01 by Qorvo

TGF2023-2-01

Qorvo

Qorvo's TGF2023-2-01 is an N-channel RF FET for amplifier applications in KU band. Featuring GaN technology, it operates in depletion mode with a max ID of 1.25A. This single-configured transistor is surface-mountable and has a rectangular package shape without leads.