BF2030WH6814XTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BF2030WH6814XTSA1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (Abs) (ID): .04 A; Maximum Operating Temperature: 150 Cel;
Datasheet	BF2030WH6814XTSA1 Datasheet
In Stock	865

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.04 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Minimum Power Gain (Gp):	20 dB
Other Names:	BF2030WH6814XTSA1TR INFINFBF2030WH6814XTSA1 2156-BF2030WH6814XTSA1-ITTR BF 2030W H6814-ND BF 2030W H6814 SP000752012
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	10 V
Additional Features:	LOW NOISE
Maximum Drain Current (Abs) (ID):	.04 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
865	-	-

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