
Image shown is a representation only.
Manufacturer | Rf Micro Devices |
---|---|
Manufacturer's Part Number | SHF-0189Z |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: HETERO-JUNCTION; Operating Mode: DEPLETION MODE; |
Datasheet | SHF-0189Z Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | GALLIUM ARSENIDE |
Field Effect Transistor Technology: | HETERO-JUNCTION |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | .2 A |
Sub-Category: | FET RF Small Signal |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-F3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | C BAND |
Maximum Operating Temperature: | 165 Cel |
Case Connection: | SOURCE |
Maximum Power Dissipation Ambient: | .8 W |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 9 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | .2 A |