NXP Semiconductors - BLF188XRS

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BLF188XRS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF188XRS
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Terminal Form: FLAT;
Datasheet BLF188XRS Datasheet
In Stock991
NAME DESCRIPTION
Minimum Power Gain (Gp): 23.2 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 135 V
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: IEC-60134
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
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Pricing (USD)

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