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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | BF904R-TAPE-13 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 7 V; |
Datasheet | BF904R-TAPE-13 Datasheet |
In Stock | 4,583 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Feedback Capacitance (Crss): | .035 pF |
Maximum Drain Current (ID): | .03 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 7 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
Additional Features: | LOW NOISE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | SOURCE |