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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BF2040W-E6433 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, ENHANCEMENT MODE; |
| Datasheet | BF2040W-E6433 Datasheet |
| In Stock | 575 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .2 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | DUAL GATE, ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .04 A |
| Maximum Drain Current (Abs) (ID): | .04 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |








