Infineon Technologies - BFP490E6327

  1. Home
  2. Infineon Technologies - BFP490E6327
BFP490E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFP490E6327
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 17500 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: PLASTIC/EPOXY;
Datasheet BFP490E6327 Datasheet
In Stock554
NAME DESCRIPTION
Nominal Transition Frequency (fT): 17500 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4.5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: HIGH RELIABILITY
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: 4.7 pF
Case Connection: EMITTER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
554 $0.625 $346.250

Popular Products

Category Top Products

2N3569 by Semitronics

2N3569

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
3001 by Advanced Power Technology

3001

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;
BFR183E6327HTSA1 by Infineon Technologies

BFR183E6327HTSA1

Infineon Technologies

BFR183E6327HTSA1 by Infineon Technologies is an NPN RF Small Signal BJT transistor with a max collector-emitter voltage of 12V and a nominal transition frequency of 8000MHz. It is designed for ultra-high frequency band applications such as amplifiers, featuring a small outline package style and Gull Wing terminal form for surface mount assembly.
BFY90 by Advanced Power Technology

BFY90

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFP740H6327XTSA1 by Infineon Technologies

BFP740H6327XTSA1

Infineon Technologies

BFP740H6327XTSA1 by Infineon Technologies is an NPN RF BJT with a Gp of 19.5 dB, ideal for amplifier applications in the C band. It features a hFE of 160, fT of 44 GHz, and can operate b/w -55 to 150°C. The transistor has a max Vce of 4.2V and IC of 0.045A, making it suitable for high-frequency amplification needs.
2N3643 by Semitronics

2N3643

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
BFR193L3E6327XTMA1 by Infineon Technologies

BFR193L3E6327XTMA1

Infineon Technologies

BFR193L3E6327XTMA1 by Infineon Technologies is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 70 and a max collector-emitter voltage of 12V, making it suitable for amplifier applications in the L Band frequency range up to 8000 MHz. This surface-mount chip carrier package features no-lead terminals and gold finish, meeting AEC-Q101 standards.
NE85633-T1B-A by Nec Electronics America

NE85633-T1B-A

Nec Electronics America

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
2N5109 by Semicoa

2N5109

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
MRF559 by Microsemi

MRF559

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A; Terminal Finish: TIN LEAD;
BFS17W by Vishay Semiconductors

BFS17W

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
BFR98 by STMicroelectronics

BFR98

STMicroelectronics

BFR98 by STMicroelectronics is a NPN RF BJT transistor with single configuration for amplifier applications. It has a max VCEsat of 0.5V, operates in the very high frequency band up to 500MHz, and can handle a collector current of 0.5A.
MPS5179ZL1 by Onsemi

MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.
KST10MTF by Onsemi

KST10MTF

Onsemi

KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.
BFR92AT/R by NXP Semiconductors

BFR92AT/R

NXP Semiconductors

NXP Semiconductors' BFR92AT/R is an NPN RF BJT transistor with 3 terminals, ideal for L Band applications. It has a max power dissipation of 0.35W, fT of 5000MHz, and hFE of 40. This small outline package transistor operates up to 150°C and can handle a max collector-emitter voltage of 15V.
BFP540ESDH6327XTSA1 by Infineon Technologies

BFP540ESDH6327XTSA1

Infineon Technologies

BFP540ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for S Band applications. With a max collector-emitter voltage of 4.5V and a nominal transition frequency of 30,000 MHz, it offers high performance in a small outline package.
BFP650H6327XTSA1 by Infineon Technologies

BFP650H6327XTSA1

Infineon Technologies

BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.
2N3137 by STMicroelectronics

2N3137

STMicroelectronics

2N3137 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 2W, operates up to 175 °C, and has a nominal transition frequency of 750 MHz. Ideal for very high-frequency circuits, it ensures reliable performance.
NSVF6001SB6T1G by Onsemi

NSVF6001SB6T1G

Onsemi

NSVF6001SB6T1G by Onsemi is an NPN BJT transistor with 6 terminals, operating at -55 to 150 °C. It has a max collector-emitter voltage of 12V and fT of 6700 MHz, suitable for ultra-high frequency amplifier applications in AEC-Q101 standard environments.
MMBTH10LT1 by Motorola

MMBTH10LT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;