NXP Semiconductors - 934067694115

  1. Home
  2. NXP Semiconductors - 934067694115
934067694115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934067694115
Description RF Small Signal Bipolar Transistors;
Datasheet 934067694115 Datasheet
In Stock3,693
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,693 - -

Popular Products

Category Top Products

BFR106E6327HTSA1 by Infineon Technologies

BFR106E6327HTSA1

Infineon Technologies

BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.
BFR92A by NXP Semiconductors

BFR92A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
BFR182WH6327XTSA1 by Infineon Technologies

BFR182WH6327XTSA1

Infineon Technologies

BFR182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 8000 MHz fT. It has a max collector-emitter voltage of 12V and 0.035A max collector current. Ideal for amplifier applications in L Band frequencies, it comes in a small outline package with gull wing terminals for surface mount assembly.
BFU730LXZ by NXP Semiconductors

BFU730LXZ

NXP Semiconductors

The NXP Semiconductors BFU730LXZ is an NPN RF Small Signal BJT with a max power dissipation of 0.16W and min DC current gain of 205. Ideal for applications requiring a max collector current of 0.03A, such as surface mount designs in telecommunications and wireless communication systems.
MSC82001 by STMicroelectronics

MSC82001

STMicroelectronics

STMicroelectronics' MSC82001 is a NPN BJT transistor with 2 terminals, ideal for L Band applications. It has a max power dissipation of 7W and max collector current of 0.2A, making it suitable for amplifier circuits in high-frequency settings. The package style is flange mount with a ceramic-metal sealed co-fired body material.
MMBTH81D87Z by Fairchild Semiconductor

MMBTH81D87Z

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
2N3866A by Microsemi

2N3866A

Microsemi

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;
MPS6507RL by Onsemi

MPS6507RL

Onsemi

MPS6507RL by Onsemi is an NPN RF BJT with 20V VCEO, 2.5pF CBC, and 800MHz fT. Ideal for amplifier applications, it has a max operating temp of 150 °C. Packaged in plastic/epoxy with through-hole terminals, it offers 0.05A IC and TIN LEAD finish.
HFA3127BZ by Renesas Electronics

HFA3127BZ

Renesas Electronics

Renesas Electronics' HFA3127BZ is an NPN RF BJT with 5 elements, ideal for amplifier applications. It operates in the ultra-high frequency band up to 8V and has a transition frequency of 8000MHz. This transistor comes in a small outline package with gull wing terminals for surface mount assembly.
HFA3101BZ96 by Intersil

HFA3101BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Terminal Finish: Matte Tin (Sn) - annealed;
2N5109 by Central Semiconductor

2N5109

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
934064959115 by NXP Semiconductors

934064959115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;
BFR740L3RHE6327XTSA1 by Infineon Technologies

BFR740L3RHE6327XTSA1

Infineon Technologies

BFR740L3RHE6327XTSA1 by Infineon Technologies is an NPN RF BJT for X Band applications. It has a max fT of 42 GHz, 0.03A IC, and 4V VCE. This single configuration transistor in chip carrier package is ideal for amplifier circuits requiring high frequency operation.
MMBTH10LT1 by Onsemi

MMBTH10LT1

Onsemi

MMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max operating temp of 150°C. It has a transition frequency of 650 MHz and a collector-emitter voltage of 25V, making it ideal for ultra-high frequency amplifier applications in small outline packages.
55GN01MA-TL-E by Onsemi

55GN01MA-TL-E

Onsemi

The Onsemi 55GN01MA-TL-E is an NPN RF BJT with a single configuration, suitable for surface mount applications. It offers a max power dissipation of 0.4W, min DC current gain of 100, and nominal transition frequency of 3000MHz. Ideal for high-frequency amplification in electronic circuits.
MPS3640 by International Devices

MPS3640

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
SD1219-5 by STMicroelectronics

SD1219-5

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
BSX28 by STMicroelectronics

BSX28

STMicroelectronics

BSX28 by STMicroelectronics is an NPN RF BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 175 °C, and supports a collector current of 0.5 A. Its compact cylindrical package ensures efficient performance in various electronic circuits.
BFP620FH7764XTSA1 by Infineon Technologies

BFP620FH7764XTSA1

Infineon Technologies

BFP620FH7764XTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max fT of 65 GHz. It features a collector-emitter voltage of 2.3V and a collector current of 0.08A, making it suitable for high-frequency amplifier applications in the C band. This small outline package transistor has 4 terminals and complies with AEC-Q101 standards.
SS9018GBU by Onsemi

SS9018GBU

Onsemi

SS9018GBU by Onsemi is an NPN RF BJT transistor with a max fT of 1100 MHz. It has a max IC of 0.05 A and hFE of 72, making it ideal for amplifier applications. With a package style of cylindrical and terminal finish in tin, it operates at up to 150°C in the very high-frequency band.