Onsemi - MCH4021

  1. Home
  2. Onsemi - MCH4021
MCH4021 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number MCH4021
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .15 A;
Datasheet MCH4021 Datasheet
In Stock2,324
NAME DESCRIPTION
Nominal Transition Frequency (fT): 13000 MHz
Maximum Collector Current (IC): .15 A
Maximum Power Dissipation (Abs): .4 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,324 - -

Popular Products

Category Top Products

HFA3046BZ96 by Intersil

HFA3046BZ96

Intersil

HFA3046BZ96 by Intersil is an NPN RF BJT with 5 elements and 14 terminals. It operates in the ultra-high frequency band up to 8V, with a transition frequency of 8000MHz. Ideal for amplifier applications, it has a max operating temperature of 150°C and is surface mountable.
BFR520T/R by NXP Semiconductors

BFR520T/R

NXP Semiconductors

NXP Semiconductors' BFR520T/R is a NPN RF BJT transistor with 3 terminals. It operates in L Band, with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle a max collector current of 0.07 A.
BFY90 by Central Semiconductor

BFY90

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;
BFR93AW by New Jersey Semiconductor Products

BFR93AW

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; No. of Elements: 1; Transistor Element Material: SILICON;
BFP620FE7764 by Infineon Technologies

BFP620FE7764

Infineon Technologies

BFP620FE7764 by Infineon Technologies is a NPN RF BJT transistor with 4 terminals, operating in the C band up to 65 GHz. It has a max collector-emitter voltage of 2.3V and collector current of 0.08A, making it suitable for high-frequency applications like wireless communication systems. The package is surface mountable with a small outline shape and matte tin finish.
JANTX2N2907AUBC by Vpt Components

JANTX2N2907AUBC

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; No. of Terminals: 3; Terminal Position: DUAL;
HFA3134IHZ96 by Renesas Electronics

HFA3134IHZ96

Renesas Electronics

Renesas Electronics' HFA3134IHZ96 is an NPN RF BJT with 2 elements, ideal for amplifier applications in the UHF band. Features include VCEsat of 0.25V, hFE of 48, and fT of 3000MHz. With a max operating temp of 85°C and compact SOT package, it's suitable for high-frequency circuit designs.
START499TR by STMicroelectronics

START499TR

STMicroelectronics

START499TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and operating temp up to 150 °C. It supports ultra-high frequency with a transition frequency of 42 GHz. This compact surface mount transistor ensures efficient performance in small electronic devices.
2N2369A by International Devices

2N2369A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
BFS17 by Vishay Telefunken

BFS17

Vishay Telefunken

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Package Body Material: PLASTIC/EPOXY;
NE85633-T1B-A by California Eastern Laboratories

NE85633-T1B-A

California Eastern Laboratories

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
BF959 by Onsemi

BF959

Onsemi

BF959 by Onsemi is a NPN RF BJT transistor with 3 terminals. It operates in the very high frequency band up to 700 MHz, ideal for amplifier applications. With a max power dissipation of 0.625W and max collector current of 0.1A, it can handle various signal amplification tasks efficiently.
BFU550XRR by NXP Semiconductors

BFU550XRR

NXP Semiconductors

BFU550XRR by NXP Semiconductors is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 12V, and transition frequency of 11GHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-frequency performance.
MMBTH10LT1 by Shandong Yiguang Electronic Joint Stock

MMBTH10LT1

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Package Shape: RECTANGULAR; No. of Terminals: 3;
BFP650H6327XTSA1 by Infineon Technologies

BFP650H6327XTSA1

Infineon Technologies

BFP650H6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for X Band applications. It has a max fT of 42 GHz, max IC of 0.15 A, and max VCE of 4 V. Ideal for amplifier circuits in high-frequency communication systems due to its silicon germanium carbon element material.
2N3866 by STMicroelectronics

2N3866

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
JANTX2N2907AUB by Vpt Components

JANTX2N2907AUB

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Terminals: 3;
SS9018GBU by Onsemi

SS9018GBU

Onsemi

SS9018GBU by Onsemi is an NPN RF BJT transistor with a max fT of 1100 MHz. It has a max IC of 0.05 A and hFE of 72, making it ideal for amplifier applications. With a package style of cylindrical and terminal finish in tin, it operates at up to 150°C in the very high-frequency band.
KSC1730Y by Onsemi

KSC1730Y

Onsemi

KSC1730Y by Onsemi is an NPN RF BJT with a max VCEsat of 0.5V, hFE of 120, and fT of 1100MHz. Ideal for amplifier applications in the UHF band due to its high transition frequency and low collector-emitter voltage. Package style is cylindrical with through-hole terminals, making it suitable for various electronic designs.
BFT92 by Infineon Technologies

BFT92

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .045 A;