Infineon Technologies - BFP620FH7764XTSA1

  1. Home
  2. Infineon Technologies - BFP620FH7764XTSA1
BFP620FH7764XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFP620FH7764XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;
Datasheet BFP620FH7764XTSA1 Datasheet
In Stock2,054
NAME DESCRIPTION
Nominal Transition Frequency (fT): 65000 MHz
Other Names: BFP620FH7764XTSA1DKR
BFP 620F H7764
BFP 620F H7764DKR-ND
2156-BFP620FH7764XTSA1
BFP 620F H7764CT-ND
SP000745304
INFINFBFP620FH7764XTSA1
BFP 620F H7764DKR
BFP 620F H7764CT
BFP620FH7764XTSA1CT
BFP620FH7764XTSA1TR
BFP 620F H7764TR-ND
BFP 620F H7764-ND
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .08 A
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 2.3 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE, HIGH RELIABILITY
Highest Frequency Band: C BAND
Maximum Collector-Base Capacitance: .2 pF
Reference Standard: AEC-Q101
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,054 - -

Popular Products

Category Top Products

MPS3563G by Onsemi

MPS3563G

Onsemi

MPS3563G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max operating temp of 150 °C, fT of 1500 MHz, and IC of 0.05 A. The package is cylindrical with through-hole terminals made of silicon material.
BFR96 by Asi Semiconductor

BFR96

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 16 W; Maximum Collector Current (IC): .075 A; Terminal Form: FLAT;
CA3083M by Rochester Electronics

CA3083M

Rochester Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
MRF426A by Motorola

MRF426A

Motorola

NPN; Surface Mount: NO; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 10; Transistor Element Material: SILICON;
15GN01MA-TL-E by Onsemi

15GN01MA-TL-E

Onsemi

The Onsemi 15GN01MA-TL-E is an NPN RF BJT with a max power dissipation of 0.4W, hFE of 200, and fT of 1000MHz. Ideal for high-frequency applications requiring low collector current up to 0.05A in surface-mount configurations at temperatures up to 150 °C.
2N5109 by Central Semiconductor

2N5109

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
NESG260234-T1 by Nec Electronics

NESG260234-T1

Nec Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
934055055135 by NXP Semiconductors

934055055135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .25 A; Terminal Form: GULL WING;
3001 by Advanced Power Technology

3001

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;
BF959RLRA by Onsemi

BF959RLRA

Onsemi

BF959RLRA by Onsemi is a NPN RF BJT with max. 20V VCE, 0.1A IC, and 700MHz fT. Ideal for very high frequency band applications due to its silicon element material and cylindrical package style. Operates at up to 150 °C, making it suitable for various RF small signal designs.
NESG260234-T1 by Nec Compound Semiconductor Devices

NESG260234-T1

Nec Compound Semiconductor Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSSO-F3;
TIS125 by Texas Instruments

TIS125

Texas Instruments

TIS125 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.25W, hFE of 30, and fT of 450MHz. It is used in RF applications due to its very high frequency band capability, operating at up to 150°C with a VCE max of 30V.
934067698215 by NXP Semiconductors

934067698215

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
LM3046M by National Semiconductor

LM3046M

National Semiconductor

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 5;
BFU725F/N1,115 by NXP Semiconductors

BFU725F/N1,115

NXP Semiconductors

BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.
MPS3563RLRAG by Onsemi

MPS3563RLRAG

Onsemi

MPS3563RLRAG by Onsemi is an NPN RF BJT with a max fT of 1500 MHz, ideal for amplifier applications. It has a max IC of 0.05A and operates at up to 150 °C. The package is cylindrical with through-hole terminals, suitable for ultra-high frequency band circuits.
BFR92PE6327HTSA1 by Infineon Technologies

BFR92PE6327HTSA1

Infineon Technologies

BFR92PE6327HTSA1 by Infineon is a NPN RF BJT transistor with max fT of 5000 MHz. It's ideal for L Band applications, featuring a max IC of 0.03 A and hFE of 70. With a package style of Small Outline, it operates up to 150 °C and has a max VCE of 15 V.
2N3866A by Space Power Electronics

2N3866A

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
934055055115 by NXP Semiconductors

934055055115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 21000 MHz; Maximum Collector Current (IC): .25 A; Case Connection: EMITTER;
2N3866A by Motorola

2N3866A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; JEDEC-95 Code: TO-205AD;