Onsemi - NSVMMBTH10LT1G

  1. Home
  2. Onsemi - NSVMMBTH10LT1G
NSVMMBTH10LT1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number NSVMMBTH10LT1G
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet NSVMMBTH10LT1G Datasheet
In Stock77,190
NAME DESCRIPTION
Nominal Transition Frequency (fT): 650 MHz
Other Names: ONSONSNSVMMBTH10LT1G
2156-NSVMMBTH10LT1G-OS
2832-NSVMMBTH10LT1GTR
NSVMMBTH10LT1G-ND
NSVMMBTH10LT1GOSCT
NSVMMBTH10LT1GOSDKR
NSVMMBTH10LT1GOSTR
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Maximum Power Dissipation (Abs): .3 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
77,190 - -

Popular Products

Category Top Products

MMBTH11 by National Semiconductor

MMBTH11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 660 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFT93W,115 by NXP Semiconductors

BFT93W,115

NXP Semiconductors

The NXP BFT93W,115 is a PNP RF BJT transistor with 3 terminals and a max power dissipation of 0.3 W. It operates in the L band with a transition frequency of 4000 MHz, making it ideal for amplifier applications in high-frequency circuits. The small outline package and surface-mount capability enhance its versatility in compact electronic designs.
BFR92A by NXP Semiconductors

BFR92A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
BFU550XRR by NXP Semiconductors

BFU550XRR

NXP Semiconductors

BFU550XRR by NXP Semiconductors is a RF BJT transistor with NPN polarity, suitable for amplifier applications in L Band frequencies. It features a max operating temperature of 150°C, collector-emitter voltage of 12V, and transition frequency of 11GHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-frequency performance.
BFR93AW by Temic Semiconductors

BFR93AW

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Shape: RECTANGULAR;
MSC3130T1 by Onsemi

MSC3130T1

Onsemi

MSC3130T1 by Onsemi is a NPN BJT transistor for amplifier applications. It operates in the ultra high frequency band with fT of 1400 MHz. With a max power dissipation of 0.2W and max operating temp of 150 °C, it's ideal for small outline packages requiring high-speed performance.
BFY740B01PB4SA1 by Infineon Technologies

BFY740B01PB4SA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934067695135 by NXP Semiconductors

934067695135

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30;
MRF237 by Asi Semiconductor

MRF237

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;
MSD2714AT1 by Onsemi

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.
BFP720H6327XTSA1 by Infineon Technologies

BFP720H6327XTSA1

Infineon Technologies

BFP720H6327XTSA1 by Infineon is a NPN RF BJT with 4 terminals, max. collector-emitter voltage of 4V, and fT of 45GHz. Ideal for X Band applications, it's a single-configured transistor in a small outline package suitable for amplifier circuits.
MPS918RL1 by Onsemi

MPS918RL1

Onsemi

MPS918RL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and a transition frequency of 600MHz. It is designed for amplifier applications in the ultra-high-frequency band, featuring a package style of cylindrical shape with through-hole terminals. Operating at up to 150 °C, it has a max collector current of 0.05A and low collector-base capacitance of 3pF.
MPSH17RLRAG by Onsemi

MPSH17RLRAG

Onsemi

MPSH17RLRAG by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.625W and fT of 800MHz. Ideal for amplifier applications, it operates in the very high-frequency band with a max collector-emitter voltage of 15V.
BFQ255A by NXP Semiconductors

BFQ255A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .3 A;
MPSH10RLRM by Onsemi

MPSH10RLRM

Onsemi

MPSH10RLRM by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Its package is cylindrical, suitable for ultra-high frequency applications at up to 150 °C operating temperature. Ideal for RF amplification in communication systems.
MMBTH10 by Panjit International

MMBTH10

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-PDSO-G3;
2N4104 by Texas Instruments

2N4104

Texas Instruments

2N4104 by Texas Instruments is an NPN BJT with 400 min hFE, 0.05A IC, and 90MHz fT. Ideal for amplifier applications due to its 0.3W power dissipation and SILICON material. Its ROUND package with WIRE terminals makes it suitable for RF signal amplification in various electronic devices.
D2T918 by Texas Instruments

D2T918

Texas Instruments

D2T918 by Texas Instruments is an NPN BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It has a min hFE of 20, max VCE of 15V, and IC of 0.05A. The package is cylindrical with 6 terminals and isolated case connection.
BFY90PBFREE by Central Semiconductor

BFY90PBFREE

Central Semiconductor

BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.
BLF871,112 by Ampleon Netherlands B V

BLF871,112

Ampleon Netherlands B V

RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;