Infineon Technologies - BFP640F-E6327

  1. Home
  2. Infineon Technologies - BFP640F-E6327
BFP640F-E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFP640F-E6327
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Datasheet BFP640F-E6327 Datasheet
In Stock1,261
NAME DESCRIPTION
Nominal Transition Frequency (fT): 30000 MHz
Other Names: BFP640FE6327INDKR
SP000015118
BFP640FE6327XTINTR-ND
BFP640FE6327HTSA1
BFP640FE6327XTINCT-ND
BFP640FE6327XTINTR
BFP640FE6327INTR
BFP640FE6327XTINCT
BFP640FE6327XT
BFP640FE6327INCT-NDR
BFP640FE6327INCT
BFP640FE6327INTR-NDR
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 110
Maximum Power Dissipation (Abs): .2 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,261 - -

Popular Products

Category Top Products

BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.
LM3046M/NOPB by Texas Instruments

LM3046M/NOPB

Texas Instruments

LM3046M/NOPB by Texas Instruments is an NPN BJT transistor with 5 elements and 14 terminals. It operates in the very high-frequency band up to 550MHz, making it suitable for amplifier applications. With a max collector-emitter voltage of 15V and operating temperature of 85°C, it offers reliable performance in various electronic circuits.
934067702215 by NXP Semiconductors

934067702215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
BFR96 by New Jersey Semiconductor Products

BFR96

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
MPS3563RL by Onsemi

MPS3563RL

Onsemi

MPS3563RL by Onsemi is an NPN BJT transistor with 600 MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capabilities and low collector current of 0.05A. Package style is cylindrical with through-hole terminals for easy installation.
BFU520WX by NXP Semiconductors

BFU520WX

NXP Semiconductors

The NXP Semiconductors BFU520WX is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 10GHz. It is designed for amplifier applications in the L band, featuring a small outline package with gull wing terminals for surface mount assembly. Operating from -40°C, it offers a peak reflow temperature of 260°C and complies with AEC-Q101 and IEC-60134 standards.
SD1080-2 by STMicroelectronics

SD1080-2

STMicroelectronics

NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);
MCH4015 by Onsemi

MCH4015

Onsemi

The Onsemi MCH4015 is an NPN RF BJT transistor with a max power dissipation of 0.45W and fT of 10GHz. It is used in X Band applications due to its small outline package, flat terminals, and dual terminal position.
NSVF4009SG4T1G by Onsemi

NSVF4009SG4T1G

Onsemi

NSVF4009SG4T1G by Onsemi is a NPN RF BJT transistor with 4 terminals, suitable for amplifier applications in L Band. It has a max power dissipation of 0.12W, hFE of 50, and operates b/w -55 to 150 °C. Ideal for surface mount designs with a small outline package style.
934067704235 by NXP Semiconductors

934067704235

NXP Semiconductors

RF Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
CA3086M by Intersil

CA3086M

Intersil

CA3086M by Intersil is a NPN BJT with 5 elements, fT of 550 MHz. It's used in RF amplifiers for VHF applications due to its 15V max collector-emitter voltage and 0.05A max collector current. The package is small outline, surface mountable with gull wing terminals.
2SC4104 by Onsemi

2SC4104

Onsemi

The Onsemi 2SC4104 is an NPN RF BJT transistor with a max VCEsat of 0.5V and hFE of 60, ideal for switching applications. It has a max IC of 0.05A, fT of 700MHz, and operates up to 150 °C. This small outline transistor in plastic/epoxy package with gull wing terminals is suitable for surface mount designs.
2N3866A by Microsemi

2N3866A

Microsemi

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Transistor Element Material: SILICON; JEDEC-95 Code: TO-39;
MPSH10 by Samsung

MPSH10

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
A5T4260 by Texas Instruments

A5T4260

Texas Instruments

A5T4260 by Texas Instruments is a PNP BJT transistor with 3 terminals, ideal for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 0.5W, operating temperature up to 175°C, and collector-emitter voltage of 15V.
NSVF4017SG4T1G by Onsemi

NSVF4017SG4T1G

Onsemi

NSVF4017SG4T1G by Onsemi is a NPN BJT transistor with 4 terminals, operating in X Band frequency range up to 10GHz. It has a max power dissipation of 0.45W and can handle collector-emitter voltage of 12V. Ideal for amplifier applications due to its high transition frequency and AEC-Q101 compliance.
BFR92AW by NXP Semiconductors

BFR92AW

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
MRF559 by Motorola

MRF559

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Collector Current (IC): .15 A; Transistor Element Material: SILICON;
FFB3946 by Onsemi

FFB3946

Onsemi

The Onsemi FFB3946 is a RF BJT transistor with NPN and PNP channels, ideal for switching applications. It has 2 elements in a small outline package, with max voltage of 40V and max current of 0.2A. Operating up to 150 °C, it offers a transition frequency of 200MHz for efficient performance.
MPSH10 by Semiconductor Technology

MPSH10

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;