Infineon Technologies - BFP843H6327XTSA1

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BFP843H6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFP843H6327XTSA1
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .125 W; Maximum Collector Current (IC): .055 A; Highest Frequency Band: C BAND;
Datasheet BFP843H6327XTSA1 Datasheet
In Stock45,427
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .055 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): .125 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: C BAND
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 150
JESD-609 Code: e3
Maximum Collector-Emitter Voltage: 2.25 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: 5.23 pF
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