NXP Semiconductors - BFU910FX

  1. Home
  2. NXP Semiconductors - BFU910FX
BFU910FX by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFU910FX
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90000 MHz; Maximum Collector Current (IC): .015 A; Moisture Sensitivity Level (MSL): 1;
Datasheet BFU910FX Datasheet
In Stock887,759
NAME DESCRIPTION
Nominal Transition Frequency (fT): 90000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .015 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Maximum Collector-Emitter Voltage: 3 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: LOW NOISE
Highest Frequency Band: K BAND
Reference Standard: IEC-60134
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
887,759 - -

Popular Products

Category Top Products

KSC2223YMTF by Onsemi

KSC2223YMTF

Onsemi

KSC2223YMTF by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max operating temp of 150°C and can handle a max collector-emitter voltage of 20V. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mounting.
2N3569 by General Diode

2N3569

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N3643 by Thomson-csf Semiconductors

2N3643

Thomson-csf Semiconductors

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; Transistor Element Material: SILICON;
MMBTH11 by Fairchild Semiconductor

MMBTH11

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFU710F,115 by NXP Semiconductors

BFU710F,115

NXP Semiconductors

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MMBTH17LT1 by Onsemi

MMBTH17LT1

Onsemi

MMBTH17LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 800MHz. It is designed for ultra-high frequency band applications like amplifiers, featuring a small outline package with gull wing terminals. The transistor's silicon element material ensures high performance in RF signal amplification.
HFA3127B by Harris Semiconductor

HFA3127B

Harris Semiconductor

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Terminal Form: GULL WING;
SD1229-1 by STMicroelectronics

SD1229-1

STMicroelectronics

NPN; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Transistor Element Material: SILICON;
934055892115 by NXP Semiconductors

934055892115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; JESD-30 Code: R-PDSO-G3;
MPSH81RLRM by Onsemi

MPSH81RLRM

Onsemi

MPSH81RLRM by Onsemi is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 20V, operating temperature up to 150 °C, and a transition frequency of 600MHz. The package is cylindrical in shape with through-hole terminals made of tin lead for easy installation.
BFR96 by Microsemi

BFR96

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;
SMMBTH10LT1 by Onsemi

SMMBTH10LT1

Onsemi

SMMBTH10LT1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 25V and a transition frequency of 650MHz. It is designed for amplifier applications, featuring a small outline package with gull wing terminals for surface mount assembly in ultra-high-frequency circuits.
MPS918RLRM by Onsemi

MPS918RLRM

Onsemi

MPS918RLRM by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at a max temp of 150 °C and has a max Vce of 15V, making it suitable for ultra-high frequency amplifier applications. The package style is cylindrical with through-hole terminals and a plastic/epoxy body material.
MPS3563RL1 by Onsemi

MPS3563RL1

Onsemi

MPS3563RL1 by Onsemi is an NPN RF BJT with 600MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capability and low collector-base capacitance. Packaged in a cylindrical shape with through-hole terminals, it operates up to 150 °C.
SD1143-1 by STMicroelectronics

SD1143-1

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
MSD2714AT1 by Onsemi

MSD2714AT1

Onsemi

MSD2714AT1 by Onsemi is an NPN BJT transistor with a max power dissipation of 0.225W and a transition frequency of 650MHz. It is ideal for applications requiring ultra-high frequency band operation, such as RF signal amplification in compact electronic devices.
934061142115 by NXP Semiconductors

934061142115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; Case Connection: EMITTER;
MSC82001 by STMicroelectronics

MSC82001

STMicroelectronics

STMicroelectronics' MSC82001 is a NPN BJT transistor with 2 terminals, ideal for L Band applications. It has a max power dissipation of 7W and max collector current of 0.2A, making it suitable for amplifier circuits in high-frequency settings. The package style is flange mount with a ceramic-metal sealed co-fired body material.
BSX29 by STMicroelectronics

BSX29

STMicroelectronics

BSX29 by STMicroelectronics is a PNP RF small signal BJT designed for switching applications. It features a max power dissipation of 0.36 W, operates up to 150 °C, and has a nominal transition frequency of 700 MHz. Ideal for compact electronic circuits requiring efficient signal control.
JANS2N3866AUB by Microsemi

JANS2N3866AUB

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Package Shape: RECTANGULAR;