Infineon Technologies - BFR740L3RH

BFR740L3RH by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFR740L3RH
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A;
Datasheet BFR740L3RH Datasheet
In Stock834
NAME DESCRIPTION
Nominal Transition Frequency (fT): 42000 MHz
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .03 A
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .16 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Highest Frequency Band: X BAND
Maximum Operating Temperature: 150 Cel
Case Connection: EMITTER
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 160
JESD-609 Code: e4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4 V
Additional Features: HIGH RELIABILITY, LOW NOISE
Maximum Collector-Base Capacitance: .15 pF
Peak Reflow Temperature (C): 260
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