Infineon Technologies - BFS17WE6327XT

  1. Home
  2. Infineon Technologies - BFS17WE6327XT
BFS17WE6327XT by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BFS17WE6327XT
Description RF Small Signal Bipolar Transistors;
Datasheet BFS17WE6327XT Datasheet
In Stock559
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
559 - -

Popular Products

Category Top Products

934064614115 by NXP Semiconductors

934064614115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .03 A; Terminal Form: FLAT;
2N3866 by NXP Semiconductors

2N3866

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;
BF240ZL1 by Onsemi

BF240ZL1

Onsemi

BF240ZL1 by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. It is ideal for amplifier applications due to its low 0.025A collector current, 0.34pF capacitance, and silicon element material. The package style is cylindrical with a plastic/epoxy body and through-hole terminals.
MPSA10RLRA by Onsemi

MPSA10RLRA

Onsemi

MPSA10RLRA by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high operating temp (150 °C). The transistor's through-hole package makes it suitable for various cylindrical-shaped devices.
MCH4014-TL-H by Onsemi

MCH4014-TL-H

Onsemi

MCH4014-TL-H by Onsemi is an NPN RF BJT with max power dissipation of 0.35W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
S822T by Temic Semiconductors

S822T

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Application: AMPLIFIER;
SMA540BTR by STMicroelectronics

SMA540BTR

STMicroelectronics

SMA540BTR by STMicroelectronics is an NPN RF small signal BJT in a rectangular surface mount package. It features a max power dissipation of 0.12 W, a collector current of 0.04 A, and is ideal for low-power amplification applications. Its gull-wing terminals ensure easy PCB integration.
BFR520,215 by NXP Semiconductors

BFR520,215

NXP Semiconductors

NXP Semiconductors' BFR520,215 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 9000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3W and can handle a max collector current of 0.07A at an operating temp of 175°C.
HFA3127RZ by Integrated Device Technology

HFA3127RZ

Integrated Device Technology

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Minimum DC Current Gain (hFE): 40;
2SC5646A-TL-H by Onsemi

2SC5646A-TL-H

Onsemi

Onsemi's 2SC5646A-TL-H is an NPN RF BJT with max power dissipation of 0.1W, hFE of 100, and fT of 8000MHz. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
HFA3127BZ by Intersil

HFA3127BZ

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; JEDEC-95 Code: MS-012AC;
2SC3838KT146P by ROHM

2SC3838KT146P

ROHM

ROHM 2SC3838KT146P is an NPN BJT transistor with max VCEsat of 0.5V, fT of 3200MHz, and hFE of 82. Ideal for S Band applications, this transistor is a single configuration amplifier in a small outline package suitable for surface mount technology.
934067711215 by NXP Semiconductors

934067711215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
MPSA10G by Onsemi

MPSA10G

Onsemi

The Onsemi MPSA10G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for ultra-high frequency applications, it has a plastic/epoxy body, cylindrical package style, and operates up to 150 °C.
MMBT918LT1 by Onsemi

MMBT918LT1

Onsemi

MMBT918LT1 by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It has a max IC of 0.05 A and operates up to 150 °C, making it suitable for ultra-high frequency amplifier applications in small outline packages.
934056690115 by NXP Semiconductors

934056690115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
BFT92WT/R by NXP Semiconductors

BFT92WT/R

NXP Semiconductors

The NXP Semiconductors BFT92WT/R is a PNP RF BJT transistor with 3 terminals, ideal for amplifier applications in the L Band. It has a max power dissipation of 0.3W, fT of 4000MHz, and operates at up to 150°C. This surface-mount transistor features a gull wing terminal form and small outline package style.
SD1012-4 by STMicroelectronics

SD1012-4

STMicroelectronics

NPN; Surface Mount: YES; JESD-609 Code: e0; Transistor Element Material: SILICON; Terminal Finish: Tin/Lead (Sn/Pb);
BF959RL by Onsemi

BF959RL

Onsemi

BF959RL by Onsemi is a NPN RF BJT with max. VCE of 20V and IC of 0.1A. Operating at 150 °C, it has fT of 700MHz making it ideal for very high frequency applications in electronics. The transistor's through-hole package and cylindrical shape enhance its performance in RF circuits.
934067695135 by NXP Semiconductors

934067695135

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30;