Infineon Technologies - BFS481E6327

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BFS481E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BFS481E6327
Description NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 12 V;
Datasheet BFS481E6327 Datasheet
In Stock191
NAME DESCRIPTION
Nominal Transition Frequency (fT): 8000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .02 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 12 V
Maximum Collector-Base Capacitance: .4 pF
Peak Reflow Temperature (C): 260
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