Infineon Technologies - BG3123H6327XTSA1

BG3123H6327XTSA1 by Infineon Technologies

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BG3123H6327XTSA1
Description	N-CHANNEL; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BG3123H6327XTSA1 Datasheet
In Stock	814

BG3123H6327XTSA1 Technical Details

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.02 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Minimum DS Breakdown Voltage:	12 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DUAL GATE, DEPLETION MODE
Additional Features:	LOW NOISE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND

Pricing (USD)

Qty.	Unit Price	Ext. Price
814	-	-

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