Infineon Technologies - BG3130R

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BG3130R by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BG3130R
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;
Datasheet BG3130R Datasheet
In Stock987
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .025 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .025 A
Moisture Sensitivity Level (MSL): 1
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