Infineon Technologies - BG3430RE6327HTSA1

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BG3430RE6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BG3430RE6327HTSA1
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .025 A; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;
Datasheet BG3430RE6327HTSA1 Datasheet
In Stock2,114
NAME DESCRIPTION
Other Names: BG 3430R E6327-ND
SP000240529
BG3430RE6327HTSA1TR
BG 3430R E6327
Package Body Material: PLASTIC/EPOXY
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .025 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DUAL GATE, DEPLETION MODE
Additional Features: LOW NOISE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Reference Standard: AEC-Q101
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