Infineon Technologies - BGA416E6327HTSA1

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.

Qorvo's RFPA3800TR13 is a GAAS technology wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for applications requiring high power amplification in RF & Microwave systems.

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

GVA-63+ by Mini-circuits is a wide band low power RF amplifier with 19 dB gain, operating from 10 MHz to 6 GHz. It has a max input power of 13 dBm and operates on a 5V supply with a max current draw of 78 mA. Ideal for applications requiring amplification in the RF and microwave range.

Qorvo's SBB5089ZSR is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mounting with a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: Matte Tin (Sn);

WIDE BAND HIGH POWER;

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

HMC462LP5E by Analog Devices is a wide band low power RF amplifier with 10 dB gain. It operates from 2-20 GHz, handling up to 18 dBm CW input power. This component, made of GaAs technology, is ideal for RF and microwave applications requiring surface mounting features.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;

The NXP Semiconductors MW7IC930NR1 is a MOS RF amplifier with 33 dB gain, operating b/w 920-960 MHz. It has a max input power of 20 dBm and VSWR of 10, suitable for narrowband high-power applications at 28V supply voltage.

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Maximum Input Power (CW): 20 dBm; Construction: COMPONENT; Gain: 9.2 dB; Characteristic Impedance: 50 ohm;

ADL5611ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 14.3 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 20 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using plastic/epoxy material and features surface mounting for easy installation in electronic systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

Analog Devices' HMC414MS8GETR is a RF amplifier with 17 dB gain, operating from 2200-2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for narrowband medium power applications in temperatures ranging from -40 to 85°C.