Infineon Technologies - BGA751L7

  1. Home
  2. Infineon Technologies - BGA751L7
BGA751L7 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BGA751L7
Description NARROW BAND LOW POWER; Minimum Operating Frequency: 875 MHz; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 85 Cel; Additional Features: LOW NOISE; Maximum Input Power (CW): 4 dBm;
Datasheet BGA751L7 Datasheet
In Stock605
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 4 dBm
Minimum Operating Frequency: 875 MHz
Characteristic Impedance: 50 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 885 MHz
RF or Microwave Device Type: NARROW BAND LOW POWER
Minimum Operating Temperature: -30 Cel
Gain: 15.8 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
605 - -

Popular Products

Category Top Products

AH202-F by Wj Communications

AH202-F

Wj Communications

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);
HMC751LC4TR by Analog Devices

HMC751LC4TR

Analog Devices

HMC751LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 17-27 GHz, ideal for microwave applications. Featuring a ceramic package, it has a max input power of -5 dBm and requires 4V supply voltage.
QPA9426TR13 by Qorvo

QPA9426TR13

Qorvo

Qorvo's QPA9426TR13 is a narrow band high power RF amplifier with 30.5 dB gain, operating from 2500 MHz to 2700 MHz. It has a max input power of 10 dBm and VSWR of 10, suitable for applications requiring high power amplification in the RF & Microwave domain. The component is designed for surface mount installation and operates within a temperature range of -40°C to 85°C.
HMC460LC5 by Analog Devices

HMC460LC5

Analog Devices

Analog Devices' HMC460LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
HMC636ST89ETR by Analog Devices

HMC636ST89ETR

Analog Devices

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
HMC498LC4TR by Analog Devices

HMC498LC4TR

Analog Devices

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
TQP7M9102-PCB900 by Qorvo

TQP7M9102-PCB900

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
AFIC901NT1 by NXP Semiconductors

AFIC901NT1

NXP Semiconductors

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.
AH202-F by Triquint Semiconductor

AH202-F

Triquint Semiconductor

AH202-F by Triquint Semiconductor is a wide band medium power RF amplifier with 14 dB gain. It operates b/w 30 MHz to 2200 MHz, handling up to 16 dBm CW input power. This component, housed in a plastic/epoxy package, is ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
MMG3014NT1 by NXP Semiconductors

MMG3014NT1

NXP Semiconductors

MMG3014NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 18.5 dB gain, and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for wide band medium power applications. This component has a plastic/epoxy package body material and requires a 5V power supply with max current of 160 mA.
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
MAX2373ETC+T by Maxim Integrated

MAX2373ETC+T

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.
MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;