Infineon Technologies - BGB420

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BGB420 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BGB420
Description NPN; Configuration: SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT; Surface Mount: YES; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .03 A; Maximum Collector-Emitter Voltage: 3.5 V;
Datasheet BGB420 Datasheet
In Stock528
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .03 A
Configuration: SINGLE WITH BUILT IN ACTIVE BIASING ELEMENT
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .12 W
Maximum Collector-Emitter Voltage: 3.5 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: LOW NOISE
Highest Frequency Band: L BAND
Case Connection: EMITTER
Moisture Sensitivity Level (MSL): 1
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