Onsemi - 2SC4399-3

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2SC4399-3 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SC4399-3
Description RF Small Signal Bipolar Transistors;
Datasheet 2SC4399-3 Datasheet
In Stock1,728
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2N2907A by General Diode

2N2907A

General Diode

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
C-33 by ROHM

C-33

ROHM

ROHM C-33 is an NPN BJT transistor for amplifier applications. Features include VCEsat of 0.4V, Gp of 15dB, and hFE of 20. Operating at up to 150°C, it has a fT of 1000MHz and can handle IC up to 0.05A in the UHF band.
2N5109 by STMicroelectronics

2N5109

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .5 A;
MMBTH11 by Fairchild Semiconductor

MMBTH11

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
934061234115 by NXP Semiconductors

934061234115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; No. of Elements: 1;
MCH4014-TL-H by Onsemi

MCH4014-TL-H

Onsemi

MCH4014-TL-H by Onsemi is an NPN RF BJT with max power dissipation of 0.35W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
2N3866 by International Diode

2N3866

International Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;
BF959ZL1 by Onsemi

BF959ZL1

Onsemi

BF959ZL1 by Onsemi is a NPN BJT transistor for amplifier applications. It has a max power dissipation of 1.5W, fT of 700MHz, and hFE of 35. Suitable for very high frequency band circuits due to its VCE of 20V and IC of 0.1A capabilities.
MPSH10ZL1 by Onsemi

MPSH10ZL1

Onsemi

MPSH10ZL1 by Onsemi is an NPN RF BJT with 3 terminals, operating up to 150 °C. It has a max collector-emitter voltage of 25V and transition frequency of 650MHz. Ideal for ultra-high frequency applications due to its low capacitance and high-frequency band capabilities.
MPSH10RLRA by Onsemi

MPSH10RLRA

Onsemi

MPSH10RLRA by Onsemi is an NPN RF BJT transistor with a max power dissipation of 0.35W and fT of 650MHz. Ideal for amplifier applications, it operates in the ultra-high frequency band and has a max collector-emitter voltage of 25V.
MCH4021 by Onsemi

MCH4021

Onsemi

Onsemi's MCH4021 is an NPN BJT with max. power dissipation of 0.4W, hFE of 60, and fT of 13GHz. Ideal for RF applications, it operates at up to 150 °C with a max. collector current of 0.15A in a surface-mount configuration.
MPS918 by Onsemi

MPS918

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;
JANTXV2N2907AL by Vpt Components

JANTXV2N2907AL

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; Peak Reflow Temperature (C): NOT SPECIFIED;
BF959RL1 by Onsemi

BF959RL1

Onsemi

BF959RL1 by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 1.5W, and fT of 700MHz. Ideal for amplifier applications in the VHF band due to its high collector-emitter voltage of 20V and max. operating temp. of 150°C.
BFU550AVL by NXP Semiconductors

BFU550AVL

NXP Semiconductors

The NXP Semiconductors BFU550AVL is a RF Small Signal BJT transistor with NPN polarity. It is a single configuration amplifier, suitable for L Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 11 GHz, it offers high performance in a small outline package.
2SC5646A-TL-H by Onsemi

2SC5646A-TL-H

Onsemi

Onsemi's 2SC5646A-TL-H is an NPN RF BJT with max power dissipation of 0.1W, hFE of 100, and fT of 8000MHz. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
MMBTH10LT1G by Onsemi

MMBTH10LT1G

Onsemi

MMBTH10LT1G by Onsemi is an NPN RF transistor with a max operating temperature of 150°C. It has a small outline package style and can handle a max collector-emitter voltage of 25V. This transistor is commonly used in ultra high frequency band applications.
934055894115 by NXP Semiconductors

934055894115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .035 A; Additional Features: HIGH RELIABILITY;
BFP183E7764HTSA1 by Infineon Technologies

BFP183E7764HTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
CPH6020-TL-E by Onsemi

CPH6020-TL-E

Onsemi

CPH6020-TL-E by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W and fT of 13GHz. Ideal for high-frequency applications, it has a max operating temp of 150°C and IC of 0.15A, making it suitable for surface mount designs requiring high-speed performance.