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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSB008NE2LX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; |
| Datasheet | BSB008NE2LX Datasheet |
| In Stock | 38 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 180 A |
| Maximum Pulsed Drain Current (IDM): | 400 A |
| Surface Mount: | YES |
| Terminal Finish: | SILVER NICKEL |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 89 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-MBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0008 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Avalanche Energy Rating (EAS): | 600 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Additional Features: | ULTRA LOW RESISTANCE |
