Infineon Technologies - BSB014N04LX3GXT

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BSB014N04LX3GXT by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSB014N04LX3GXT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; No. of Elements: 1; Minimum DS Breakdown Voltage: 40 V;
Datasheet BSB014N04LX3GXT Datasheet
In Stock619
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 260 mJ
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 400 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -40 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 40 V
Maximum Power Dissipation (Abs): 89 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-MBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
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