Infineon Technologies - BSB015N04NX3GXUMA1

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BSB015N04NX3GXUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSB015N04NX3GXUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 89 W; Package Shape: RECTANGULAR; JESD-609 Code: e4;
Datasheet BSB015N04NX3GXUMA1 Datasheet
In Stock1,580
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 180 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: SILVER NICKEL
No. of Terminals: 3
Maximum Power Dissipation (Abs): 89 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-MBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0015 ohm
Moisture Sensitivity Level (MSL): 3
Avalanche Energy Rating (EAS): 290 mJ
Other Names: 2156-BSB015N04NX3GXUMA1
BSB015N04NX3 G
BSB015N04NX3 GDKR-ND
SP000597852
BSB015N04NX3 GCT
BSB015N04NX3GXUMA1CT
BSB015N04NX3 GTR-ND
IFEINFBSB015N04NX3GXUMA1
BSB015N04NX3GXUMA1DKR
BSB015N04NX3 GCT-ND
BSB015N04NX3 GDKR
BSB015N04NX3 G-ND
BSB015N04NX3GXUMA1TR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
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