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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSB280N15NZ3GXUMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Maximum Drain Current (Abs) (ID): 30 A; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | BSB280N15NZ3GXUMA1 Datasheet |
| In Stock | 1,692 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 9 A |
| Maximum Pulsed Drain Current (IDM): | 120 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | SILVER NICKEL |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 57 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-MBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .028 ohm |
| Moisture Sensitivity Level (MSL): | 3 |
| Avalanche Energy Rating (EAS): | 120 mJ |
| Other Names: |
BSB280N15NZ3 GDKR-ND BSB280N15NZ3GXUMA1CT BSB280N15NZ3 GDKR BSB280N15NZ3G BSB280N15NZ3 G BSB280N15NZ3 GTR-ND IFEINFBSB280N15NZ3GXUMA1 BSB280N15NZ3 GCT-ND BSB280N15NZ3 GCT BSB280N15NZ3GXUMA1DKR BSB280N15NZ3GXUMA1TR SP000604534 2156-BSB280N15NZ3GXUMA1 BSB280N15NZ3 G-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 150 V |
| Maximum Drain Current (Abs) (ID): | 30 A |
