Infineon Technologies - BSC010NE2LSIATMA1

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BSC010NE2LSIATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC010NE2LSIATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-609 Code: e3; Terminal Position: DUAL;
Datasheet BSC010NE2LSIATMA1 Datasheet
In Stock21,489
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 38 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0014 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 100 mJ
Other Names: BSC010NE2LSIATMA1DKR
BSC010NE2LSIDKR
BSC010NE2LSIATMA1TR
BSC010NE2LSICT-ND
BSC010NE2LSI
BSC010NE2LSIATMA1CT
BSC010NE2LSIDKR-ND
BSC010NE2LSITR-ND
BSC010NE2LSI-ND
SP000854376
BSC010NE2LSICT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
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