Infineon Technologies - BSC019N04NSGATMA1

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BSC019N04NSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC019N04NSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; No. of Elements: 1; Maximum Drain Current (ID): 29 A;
Datasheet BSC019N04NSGATMA1 Datasheet
In Stock2,971
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 29 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0019 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 295 mJ
Other Names: BSC019N04NSGATMA1CT
BSC019N04NS GDKR-ND
BSC019N04NS GCT
BSC019N04NS G-ND
BSC019N04NS GTR-ND
BSC019N04NSGATMA1CT-NDTR-ND
2156-BSC019N04NSGATMA1
BSC019N04NS G
BSC019N04NS GDKR
BSC019N04NS GCT-ND
BSC019N04NSGATMA1TR
BSC019N04NSGATMA1DKR
BSC019N04NSGATMA1DKR-NDTR-ND
INFINFBSC019N04NSGATMA1
SP000388299
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
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