BSC020N03LSGATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC020N03LSGATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Drain Current (ID): 28 A; JESD-609 Code: e3;
Datasheet	BSC020N03LSGATMA1 Datasheet
In Stock	12,416

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	28 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0029 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	180 mJ
Other Names:	BSC020N03LS G-ND SP000237662 BSC020N03LSGATMA1TR BSC020N03LS GDKR SP000264746 BSC020N03LS GDKR-ND BSC020N03LSGATMA1CT BSC020N03LSGATMA1DKR BSC020N03LS GTR-ND BSC020N03LS GCT-ND Q3390169 BSC020N03LS GCT BSC020N03LS G BSC020N03LSGXT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
12,416	-	-

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