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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC050N03LSGATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | BSC050N03LSGATMA1 Datasheet |
| In Stock | 10,742 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 18 A |
| Maximum Pulsed Drain Current (IDM): | 320 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0075 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 35 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
