Infineon Technologies - BSC050N03LSGATMA1

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BSC050N03LSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC050N03LSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; Transistor Application: SWITCHING; Moisture Sensitivity Level (MSL): 1;
Datasheet BSC050N03LSGATMA1 Datasheet
In Stock10,742
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0075 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 35 mJ
Other Names: BSC050N03LSGINCT
BSC050N03LS G
SP000269785
BSC050N03LSGATMA1INACTIVE
BSC050N03LSG
BSC050N03LS G-ND
BSC050N03LSGATMA1TR
BSC050N03LSGATMA1CT-NDTR-ND
BSC050N03LSGXT
BSC050N03LSGINDKR
BSC050N03LSGINTR-ND
Q3390169A
BSC050N03LSGINTR
BSC050N03LSGINCT-ND
BSC050N03LS GINACTIVE-ND
BSC050N03LSGINDKR-ND
BSC050N03LSGATMA1CT
BSC050N03LSGATMA1DKR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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