BSC060P03NS3EGATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSC060P03NS3EGATMA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Turn On Time (ton): 231 ns; Package Body Material: PLASTIC/EPOXY;
Datasheet	BSC060P03NS3EGATMA1 Datasheet
In Stock	11,197

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	231 ns
Maximum Drain Current (ID):	17.7 A
Maximum Pulsed Drain Current (IDM):	200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	83 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	150 ns
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.006 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	149 mJ
Other Names:	BSC060P03NS3E GDKR-ND BSC060P03NS3E GCT BSC060P03NS3EG BSC060P03NS3E G BSC060P03NS3EGATMA1TR BSC060P03NS3E GDKR 2156-BSC060P03NS3EGATMA1 INFINFBSC060P03NS3EGATMA1 SP000472984 BSC060P03NS3E G-ND BSC060P03NS3EGATMA1CT BSC060P03NS3E GCT-ND BSC060P03NS3E GTR-ND BSC060P03NS3EGATMA1DKR
Maximum Feedback Capacitance (Crss):	220 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
11,197	-	-

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