Infineon Technologies - BSC070N10NS5SCATMA1

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BSC070N10NS5SCATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC070N10NS5SCATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Power Dissipation Ambient: 3 W; Package Body Material: PLASTIC/EPOXY;
Datasheet BSC070N10NS5SCATMA1 Datasheet
In Stock4,353
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 82 A
Maximum Pulsed Drain Current (IDM): 328 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 100 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 3 W
Maximum Drain-Source On Resistance: .007 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 73 mJ
Other Names: 448-BSC070N10NS5SCATMA1CT
448-BSC070N10NS5SCATMA1TR
SP005348852
448-BSC070N10NS5SCATMA1DKR
Maximum Feedback Capacitance (Crss): 28 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
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