Infineon Technologies - BSC072N08NS5ATMA1

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BSC072N08NS5ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC072N08NS5ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Datasheet BSC072N08NS5ATMA1 Datasheet
In Stock24,897
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 296 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 5
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0072 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 40 mJ
Other Names: BSC072N08NS5ATMA1TR
BSC072N08NS5ATMA1DKR
BSC072N08NS5ATMA1CT
BSC072N08NS5ATMA1-ND
SP001232628
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 80 V
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