Infineon Technologies - BSC0911ND

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BSC0911ND by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC0911ND
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2.2 A; JESD-609 Code: e3;
Datasheet BSC0911ND Datasheet
In Stock549
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 25 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .0048 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
549 $0.930 $510.570

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