
Image shown is a representation only.
Manufacturer | Infineon Technologies |
---|---|
Manufacturer's Part Number | BSC0923NDIATMA1 |
Description | N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Maximum Power Dissipation Ambient: 2.5 W; No. of Elements: 2; |
Datasheet | BSC0923NDIATMA1 Datasheet |
In Stock | 149 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 10 A |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-N8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN SOURCE |
Maximum Power Dissipation Ambient: | 2.5 W |
Maximum Drain-Source On Resistance: | .007 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 9 mJ |
Maximum Feedback Capacitance (Crss): | 49 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 30 V |