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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC120N03LSGATMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 10 mJ; Maximum Drain Current (ID): 12 A; JESD-30 Code: R-PDSO-F8; |
| Datasheet | BSC120N03LSGATMA1 Datasheet |
| In Stock | 11,462 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 12 A |
| Maximum Pulsed Drain Current (IDM): | 156 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .012 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 10 mJ |
| Other Names: |
BSC120N03LSGATMA1CT BSC120N03LS G BSC120N03LSGATMA1DKR-NDTR-ND BSC120N03LSGINTR BSC120N03LSGATMA1DKR BSC120N03LSGINDKR-ND BSC120N03LSGINCT BSC120N03LSG SP000302848 BSC120N03LSGATMA1TR BSC120N03LSGXT BSC120N03LSGINTR-ND BSC120N03LSGINDKR BSC120N03LSGATMA1CT-NDTR-ND BSC120N03LSGINCT-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 30 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
