Infineon Technologies - BSC159N10LSFGATMA1

BSC159N10LSFGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC159N10LSFGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 114 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 1;
Datasheet BSC159N10LSFGATMA1 Datasheet
In Stock1,374
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 252 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 114 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0159 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 155 mJ
Other Names: BSC159N10LSFG
BSC159N10LSF GDKR
BSC159N10LSFGATMA1TR
BSC159N10LSF GCT
BSC159N10LSF GTR-ND
BSC159N10LSF G
BSC159N10LSFGATMA1DKR
BSC159N10LSF G-ND
BSC159N10LSF GCT-ND
BSC159N10LSFGATMA1CT
BSC159N10LSF GDKR-ND
SP000379614
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 63 A
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