Infineon Technologies - BSC190N12NS3G

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BSC190N12NS3G by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC190N12NS3G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Moisture Sensitivity Level (MSL): 1; Terminal Position: DUAL;
Datasheet BSC190N12NS3G Datasheet
In Stock867
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.6 A
Maximum Pulsed Drain Current (IDM): 176 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 69 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .019 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 60 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 120 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 44 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
867 $1.530 $1,326.510

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