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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSC240N12NS3G |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; No. of Terminals: 8; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; |
| Datasheet | BSC240N12NS3G Datasheet |
| In Stock | 4,920 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 37 A |
| Maximum Pulsed Drain Current (IDM): | 148 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 66 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .024 ohm |
| Avalanche Energy Rating (EAS): | 50 mJ |
| Other Names: |
BSC240N12NS3 GCT 2156-BSC240N12NS3 G-ITTR BSC240N12NS3GCT BSC240N12NS3GTR BSC240N12NS3 G-ND BSC240N12NS3G BSC240N12NS3 GDKR-ND IFEINFBSC240N12NS3 G BSC240N12NS3GDKR BSC240N12NS3 GCT-ND BSC240N12NS3 GDKR BSC240N12NS3 GTR-ND |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 120 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 37 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |









