Infineon Technologies - BSC252N10NSFGATMA1

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BSC252N10NSFGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSC252N10NSFGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.2 A; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 100 V;
Datasheet BSC252N10NSFGATMA1 Datasheet
In Stock27,754
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.2 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0252 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 68 mJ
Other Names: BSC252N10NSF GCT
BSC252N10NSF GDKR
BSC252N10NSFGATMA1CT
BSC252N10NSF G
BSC252N10NSFGATMA1TR
BSC252N10NSFGATMA1DKR
SP000379608
BSC252N10NSF GCT-ND
BSC252N10NSF G-ND
BSC252N10NSF GDKR-ND
BSC252N10NSF GTR-ND
BSC252N10NSF GTR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
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