Infineon Technologies - BSD214SNH6327XTSA1

  1. Home
  2. Infineon Technologies - BSD214SNH6327XTSA1
BSD214SNH6327XTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSD214SNH6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .14 ohm; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
Datasheet BSD214SNH6327XTSA1 Datasheet
In Stock14,830
NAME DESCRIPTION
Other Names: 448-BSD214SNH6327XTSA1TR
448-BSD214SNH6327XTSA1DKR
INFINFBSD214SNH6327XTSA1
BSD214SN H6327-ND
BSD214SNH6327XTSA1-ND
2156-BSD214SNH6327XTSA1
SP000917656
BSD214SN H6327
448-BSD214SNH6327XTSA1CT
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 9 pF
Maximum Drain Current (ID): 1.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .14 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
14,830 - -

Popular Products

Category Top Products

IRF9310TRPBF-1 by International Rectifier

IRF9310TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G8;
BSS84 by Lite-on Semiconductor

BSS84

Lite-on Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 10 ohm; Terminal Form: GULL WING;
2N7002 by National Semiconductor

2N7002

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;
NX3008NBKS,115 by Nexperia

NX3008NBKS,115

Nexperia

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum Operating Temperature: -50 Cel; Transistor Application: SWITCHING;
326 by Nte Electronics

326

Nte Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Elements: 1; Field Effect Transistor Technology: JUNCTION;
SI4447ADY-T1-GE3 by Vishay Siliconix

SI4447ADY-T1-GE3

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8; Transistor Application: SWITCHING;
SI2356DS-T1-GE3 by Vishay Intertechnology

SI2356DS-T1-GE3

Vishay Intertechnology

SI2356DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 40V DS breakdown voltage and 4.3A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.051 ohm on-resistance. The small outline package features gull wing terminals and can withstand temperatures from -55 to 150°C.
2N7002K by Secos

2N7002K

Secos

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF862,215 by NXP Semiconductors

BF862,215

NXP Semiconductors

BF862,215 by NXP Semiconductors is a small signal FET with N-channel configuration for amplifier applications. It features a min DS breakdown voltage of 20V and max drain current of 0.04A. With surface mount capability and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
FDV305N_NL by Fairchild Semiconductor

FDV305N_NL

Fairchild Semiconductor

FDV305N_NL by Fairchild Semiconductor is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.9A Drain Current, and 0.22 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
2N7002LT3G by Onsemi

2N7002LT3G

Onsemi

2N7002LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
NUD3124LT1G by Onsemi

NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
MMBF170LT1 by Onsemi

MMBF170LT1

Onsemi

MMBF170LT1 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 0.5A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. This small outline transistor has a peak reflow temp of 235°C and can withstand temperatures from -55 to 150°C.
NX3008PBK,215 by Nexperia

NX3008PBK,215

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JEDEC-95 Code: TO-236AB;
BSS138W-7-F by Multicomp Pro

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
2N7002BK,215 by NXP Semiconductors

2N7002BK,215

NXP Semiconductors

NXP Semiconductors' 2N7002BK,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.35A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 1.6 ohm RDS(on) and -55 to 150 °C temp range.
FDC640P by Fairchild Semiconductor

FDC640P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
STN3P6F6 by STMicroelectronics

STN3P6F6

STMicroelectronics

STN3P6F6 by STMicroelectronics is a P-CHANNEL FET with 60V DS breakdown voltage and 3A ID. It's used for switching applications in enhancement mode, featuring 0.16 ohm RDS(on) and built-in diode. The transistor has a GULL WING terminal form, operates in DUAL position, and can withstand peak reflow temp of 260°C.
2N7002T-7-F by Diodes Incorporated

2N7002T-7-F

Diodes Incorporated

2N7002T-7-F by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode and enhancement mode operation. Package style is small outline, making it suitable for surface mount designs in various electronic devices.
BSS138P by Nexperia

BSS138P

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-236AB;