BSD223PH6327XTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSD223PH6327XTSA1
Description	P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Terminal Finish: TIN; Maximum Drain Current (ID): .39 A;
Datasheet	BSD223PH6327XTSA1 Datasheet
In Stock	28,711

NAME	DESCRIPTION
Other Names:	BSD223P H6327-ND BSD223PH6327XTSA1-ND BSD223P H6327 BSD223PH6327XTSA1TR SP000924074 BSD223PH6327XTSA1DKR BSD223PH6327XTSA1CT
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	22 pF
Maximum Drain Current (ID):	.39 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	1.2 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
28,711	-	-

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