Infineon Technologies - BSD235NH6327

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BSD235NH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD235NH6327
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Package Style (Meter): SMALL OUTLINE; Terminal Form: GULL WING;
Datasheet BSD235NH6327 Datasheet
In Stock697
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .95 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .35 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
697 $0.340 $236.980

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