Infineon Technologies - BSD314SPEH6327XTSA1

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BSD314SPEH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSD314SPEH6327XTSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G6; JESD-609 Code: e3;
Datasheet BSD314SPEH6327XTSA1 Datasheet
In Stock2,179
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.5 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .14 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: IFEINFBSD314SPEH6327XTSA1
448-BSD314SPEH6327XTSA1CT
448-BSD314SPEH6327XTSA1TR
2156-BSD314SPEH6327XTSA1
448-BSD314SPEH6327XTSA1DKR
BSD314SPEH6327XTSA1-ND
SP000917658
Maximum Feedback Capacitance (Crss): 11 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Reference Standard: AEC-Q101
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